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| MITSUBISHI IGBT MODULES CM150DU-24NFH HIGH POWER SWITCHING USE CM150DU-24NFH IC ................................................................... 150A VCES ......................................................... 1200V Insulated Type 2-elements in a pack APPLICATION High frequency switching use (30kHz to 60kHz). Gradient amplifier, Induction heating, power supply, etc. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm TC measured point 94 7 17 80 0.25 23 23 2-6.5 MOUNTING HOLES 4 E2 G2 24 C2E1 E2 C1 18 G1E1 4 11 48 12 3-M5NUTS 12mm deep 16 2.5 25 2.5 16 13.5 E2 G2 TAB 7.5 4 #110. t=0.5 C2E1 E2 13 CM C1 G1 E1 30 -0.5 +1 LABEL 21.2 CIRCUIT DIAGRAM Feb.2004 MITSUBISHI IGBT MODULES CM150DU-24NFH HIGH POWER SWITCHING USE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) PC' (Note 3) Tj Tstg Viso -- -- -- (Tj = 25C) Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight G-E Short C-E Short Operation Pulse Operation Pulse TC = 25C TC' = 25C*4 Conditions (Note 2) (Note 2) (Note 2) (Note 2) Main Terminal to base plate, AC 1 min. Main Terminal M5 Mounting holes M6 Typical value Ratings 1200 20 150 300 150 300 650 960 -40 ~ +150 -40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 Unit V V A A A A W W C C V N*m N*m g ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q Rth(j-c')R RG Parameter Collector cutoff current (Tj = 25C) Test conditions VCE = VCES, VGE = 0V IC = 15mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25C IC = 150A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 600V, IC = 150A, VGE = 15V VCC = 600V, IC = 150A VGE1 = VGE2 = 15V RG = 2.1, Inductive load switching operation IE = 150A IE = 150A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound Applied*2 (1/2 module) IGBT part (1/2 module) FWDi part (1/2 module) Min. -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 2.1 Limits Typ. -- 6 -- 5.0 5.0 -- -- -- 680 -- -- -- -- -- 7.5 -- -- -- 0.07 -- -- -- Max. 1 7.5 0.5 6.5 -- 24 2.0 0.45 -- 150 80 400 150 150 -- 3.5 0.19 0.35 -- 0.13*3 0.21*3 21 Unit mA V A V nF nF nF nC ns ns ns ns ns C V C/W C/W C/W C/W C/W Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage (Note 4) Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance*4 External gate resistance *1 : TC measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone "G-746". *3 : If you use this value, Rth(f-a) should be measured just under the chips. *4 : TC' measured point is just under the chips. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. No short circuit capability is designed. Feb.2004 MITSUBISHI IGBT MODULES CM150DU-24NFH HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 300 COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) 300 COLLECTOR CURRENT IC (A) Tj = 25C 250 200 150 100 50 0 VGE=20 (V) 14 13 15 12 VCE = 10V 250 200 150 100 50 0 11 10 9 8 0 2 4 6 8 10 Tj = 25C Tj = 125C 0 5 10 15 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 Tj = 25C IC = 300A 9 VGE = 15V 8 Tj = 25C Tj = 125C 7 6 5 4 3 2 1 0 0 50 100 150 200 250 300 8 6 IC = 150A 4 IC = 60A 2 0 6 8 10 12 14 16 18 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 EMITTER CURRENT IE (A) 7 5 3 2 CAPACITANCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 Tj = 125C Tj = 25C Cies 101 7 5 3 2 102 7 5 3 2 100 7 5 3 2 Coes Cres VGE = 0V 101 0 1 2 3 4 5 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Feb.2004 EMITTER-COLLECTOR VOLTAGE VEC (V) MITSUBISHI IGBT MODULES CM150DU-24NFH HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 103 7 5 SWITCHING TIME (ns) 3 2 5 3 2 5 3 td(off) td(on) tf tr Conditions: VCC = 600V VGE = 15V RG = 2.1 Tj = 125C Inductive load 23 5 7 103 102 7 5 3 2 Irr trr 2 102 7 5 3 2 102 7 101 7 5 3 2 100 1 10 2 3 5 7 102 101 1 10 2 3 5 7 102 Conditions: 5 VCC = 600V VGE = 15V 3 RG = 2.1 2 Tj = 25C Inductive load 101 23 5 7 103 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) 7 5 3 2 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 100 7 5 3 2 Single Pulse TC = 25C 10-1 7 5 3 2 Single Pulse TC = 25C 10-1 7 5 3 2 10-1 7 5 3 2 10-1 7 5 3 2 10-2 7 5 3 Per unit base = 2 10-2 7 5 3 2 10-2 7 5 3 Per unit base = 2 10-2 7 5 3 2 Rth(j-c) = 0.19C/W 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TIME (s) 10-3 Rth(j-c) = 0.35C/W 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 150A VCC = 400V 15 VCC = 600V 10 5 0 0 200 400 600 800 1000 GATE CHARGE QG (nC) Feb.2004 REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 103 Tj = 25C 7 7 |
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